Samsung’s new 10nm 64GB mobile flash memory chips already in production; smaller, faster, cooler

In news that may not come as a surprise to too many folks, Samsung has announced that its next-gen memory chip, the 64GB eMMC Pro Class 2000, is already in production. As we know, this technology is among the fastest moving in the world, so chips becoming smaller, faster, and running cooler is no huge surprise, but the speed at which they evolve is mind-boggling.

These little 10nm fellas rock a 20 percent smaller physical footprint, and Samsung claims 30 percent advantages in both performance and manufacturing productivity compared to their last generation chip. The chips will have a write speed of 2,000 IOPS (input/output per second) and a read speed of 5,000 IOPS. That’s a 33% increase in write speed and a 42% increase in read speed compared with the previous generation. Seeing as these chips are already in production, they’ll be coming soon to a device near you. Hit the break for the full press release.

 

Samsung Introduces Advanced Memory Storage Solution for Slim Smartphones and Tablets
SEOUL, Korea on Nov. 15. 2012

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced a next-generation 64GB embedded multimedia card (eMMC) using 10 nanometer (nm)-class* process technology. The new 64Gb NAND memory went into production late last month.

Myungho Kim, vice president of Memory marketing, Device Solutions, Samsung Electronics noted, “The new high-speed, small form factor eMMC reinforces Samsung’s technology leadership in storage memory solutions. We look forward to expanding our line-up of embedded memory solutions in conjunction with the new chip’s design, in pursuing a system-level adoption of application processors and other key components that form the foundation for the most advanced mobile platforms. This will allow us to better attend to time-to-market demands enabling the design of more convenient features for next-generation mobile applications.”

Embedded memory is the key memory component in popular mobile applications such as smartphones and tablets. Advanced high-performance, high-density eMMCs allow users to access high-density and high-resolution content such as full HD video on their latest mobile devices and provide a better user experience for web browsing, gaming and running rich applications.

Samsung is applying 64Gb high-performance NAND memory using its10nm-class technology to the new 64GB eMMC Pro Class 2000 memory solution. The new embedded memory solution exceeds the performance levels of the conventional 64GB eMMC Pro Class 1500 based on an eMMC 4.5 interface.

The new high-speed eMMC will be submitted next year to the industry standards body JEDEC, (Joint Electron Engineering Council) for adoption as an industry standard.

Samsung’s next-generation 64GB eMMC Pro Class 2000 comes just five months after the company introduced its first embedded memory supporting the eMMC4.5 interface and delivers a 30 percent advantage in performance over that solution.

The 10nm-class technology based NAND also is process compatible to Samsung’s advanced 20nm-class* 64Gb MLC NAND, which was first available last May, improving manufacturing productivity by 30 percent.

The new memory solution has a random write speed of 2,000 IOPS (input/output per second) and a random read speed of 5,000 IOPS. In addition, sequential read and write speeds are 260 megabytes per second (MB/s) and 50MB/s respectively, which is up to 10 times faster than a class 10 external memory card that reads at 24MB/s and writes at 12MB/s, greatly enhancing the smoothness of multitasking on mobile gadgets.

Current mobile applications show a distinctive trend to slimmer designs and larger display screens, while using advanced multi-core processors and high density (2 Gigabyte) LPDDR2 memory for higher performance, with larger batteries for longer usage on a single charge. This new chip accommodates the increasing size limitations of mobile form factors at the component level.

The 64GB eMMC Pro Class 2000 measures 11.5mm by 13mm, which represents a 20 percent reduction in size over the conventional embedded memory form factor (12mm by 16mm).

For more information about Samsung memory, visit: www.samsungsemi.com or www.samsung.com/memory

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Samsung and the stylized Samsung design are trademarks and service marks of Samsung Electronics Co., Ltd. Other trademarks are the property of their respective owners.

 

» See more articles by Sean Stewart


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  • GraveUypo

    10nm?
    what happened to the mysterious physical barrier of 12nm that could never be broken i heard them talk about back when were still at 130nm?

    • wizard

      Unbreakable barriers have always been put and broken during the past 20 years in technology scaling

      • GraveUypo

        well not physical ones. theoretically the transistor were to be so thin at this scale that they wouldn’t conduct the eletrons properly anymore and we’d have to switch from silicon to some organic composite.